Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 30A STARPOWER SEMICONDUCTOR
Product Code: GD30PJX65F1S
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Delivery terms
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Home delivery
Home delivery
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Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
After handing over the goods to the courier, we will inform you by e-mail. Free delivery for orders over 50 EUR.
2,50 €
Product description
Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 30A STARPOWER SEMICONDUCTOR
Specifications
SKU
U-4889741
Product code
GD30PJX65F1S
Supplier product description
Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 30A
Supplier parameters
Product code
GD30PJX65F1S
Case
F1.1
Collector current
30A
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Manufacturer
STARPOWER SEMICONDUCTOR
Max. off-state voltage
650V
Mechanical mounting
screw
Pulsed collector current
60A
Semiconductor structure
diode/transistor
Technology
Trench FS IGBT
Type of semiconductor module
IGBT
Topology
three-phase diode bridge
Supplier's product code
GD30PJX65F1S
Product ID
U-4889741
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].