Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W MICROCHIP TECHNOLOGY
Product Code: APTM120DA30CT1G
Brand
More similar products
Delivery terms
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Latvia please use www.lemona-electronics.eu to order.
Over €50.00 (Orders up to 1000 kgs) | For free |
To €50.00 (Orders up to 1000 kgs) | 3,49 - 3,99 € |
Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
After handing over the goods to the courier, we will inform you by e-mail. Free delivery for orders over 50 EUR.
2,50 €
Product description
Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W MICROCHIP TECHNOLOGY
Specifications
Supplier product description
Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W
Supplier parameters
Product code
APTM120DA30CT1G
Case
SP1
Drain current
23A
Drain-source voltage
1.2kV
Electrical mounting
Press-in PCB
Gate-source voltage
±30V
Manufacturer
MICROCHIP TECHNOLOGY
Mechanical mounting
screw
On-state resistance
0.36Ω
Power dissipation
657W
Pulsed drain current
195A
Semiconductor structure
SiC diode/transistor
Technology
SiC
Type of semiconductor module
MOSFET transistor
Topology
NTC thermistor
Brand
MICROCHIP
Supplier's product code
APTM120DA30CT1G
Product ID
U-5104003
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].