Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 51A; Idm: 161A; 362W MICROCHIP TECHNOLOGY
Product Code: MSC031SMC120B4N
Brand
More similar products
Delivery terms
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Latvia please use www.lemona-electronics.eu to order.
Over €50.00 (Orders up to 1000 kgs) | For free |
To €50.00 (Orders up to 1000 kgs) | €3.99 |
Delivery to a DPD Pickup location
Delivery to a DPD Pickup location
After handing over the goods to the courier, we will inform you by e-mail. Free delivery for orders over 50 EUR.
2,50
Product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 51A; Idm: 161A; 362W MICROCHIP TECHNOLOGY
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 51A; Idm: 161A; 362W
Supplier parameters
Product code
MSC031SMC120B4N
Brand
MICROCHIP
Supplier's product code
MSC031SMC120B4N
Product ID
U-4780196
Case
TO247-4-notch
Drain current
51A
Drain-source voltage
1.2kV
Family
SMC
Features of semiconductor devices
Kelvin terminal
Gate charge
70nC
Kind of channel
enhancement
Kind of package
tube
Manufacturer
MICROCHIP TECHNOLOGY
Mounting
THT
On-state resistance
42mΩ
Polarisation
unipolar
Power dissipation
362W
Pulsed drain current
161A
Technology
SiC
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].